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| FMMTA12 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR DARLINGTON TRANSISTORS | |||
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SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 4 - DECEMBER 1996
COMPLEMENTARY TYPES -
FMMTA12 Â NONE
FMMTA13 Â FMMTA63
FMMTA14 Â FMMTA64
FMMTA12
FMMTA13
FMMTA14
E
C
PARTMARKING DETAILS Â FMMTA12 Â 3W
B
FMMTA13 Â 1M
FMMTA14 Â 1N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL FMMTA12 FMMTA13/14 UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Collector-Emitter Voltage
VCES
20
40
V
Emitter-Base Voltage
VEBO
10
V
Continuous Collector Current
IC
300
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter FMMTA12 V(BR)CES 20
Breakdown Voltage FMMTA13/14
40
Collector Cut-Off FMMTA12 ICES
Current
V
V
100 nA
IC=100µA, IB=0*
IC=100µA, IB=0*
VCB=15V, VBE=0
Collector Cut-Off FMMTA12 ICBO
Current
FMMTA13/14
100 nA
100 nA
VCB=15V, IE=0
VCB=30V, IE=0
Emitter Cut-Off Current
IEBO
100 nA
VEB=10V, IC=0
Static Forward
FMMTA12 hFE
20K
Current Transfer FMMTA13
5K
Ratio
FMMTA13
10K
FMMTA14
10K
FMMTA14
20K
IC=10mA, VCE =5V*
IC=10mA, VCE =5V*
IC=100mA, VCE=5V*
IC=10mA, VCE =5V*
IC=100mA, VCE=5V*
Collector-Emitter FMMTA12 VCE(sat)
Saturation Voltage FMMTA13/14
1.0
V
0.9
V
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
Base-Emitter
On Voltage
FMMTA12
VBE(on)
FMMTA13/14
1.4
V
2.0
V
*Measured under pulsed conditions. Pulse width =300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for these devices
For typical graphs see FMMT38A datasheet
IC=10mA, VCE=5V*
IC=100mA,VCE=5V*
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