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| FMMTA06 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 5 â MARCH 2001
FEATURES
* 80 Volt VCEO
* Gain of 50 at IC=100mA
PARTMARKING DETAIL â
FMMTA06 â 1G
FMMTA06R â MA
FMMTA06
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
SOT23
VALUE
80
80
4
500
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
VALUE UNIT CONDITIONS.
MIN. MAX.
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V
IC=1mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 4
V
IE=100µA
Collector Cut-Off
Current
ICES
0.1
µA
VCES=60V
Collector Cut-Off
Current
ICBO
0.1
µA
VCB=80V
Static Forward Current
Transfer Ratio
Collector-Emitter Saturation
Voltage
hFE
50
50
VCE(sat)
0.25 V
IC=10mA, VCE=1V*
IC=100mA, VCE=1V*
IC=100mA, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.2
V
IC=100mA, VCE=1V*
Transition
Frequency
fT
100
MHz
IC=10mA, VCE=2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
TBA
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