FMMT734 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON POWER DARLINGTON TRANSISTOR

“SUPER SOT” SOT23 PNP SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 – AUGUST 1997
FEATURES
* 625mW POWER DISSIPATION
* Very High h_FE at High Current (5A)
* Extremely Low V_CE(sat) at High Current (1A)
COMPLEMENTARY TYPE – FMMT634
PARTMARKING DETAIL – 734
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
FMMT734
E
C
B
SOT23
VALUE
-100
-100
-12
-5
-800
625
-55 to +150
UNIT
V
V
V
A
mA
mW
°C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%