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| FMMT6520 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 - NOVEMBER 1995 7
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=-100mA
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
FMMT6520
E
C
B
COMPLEMENTARY TYPE FMMT6517
PARTMARKING DETAIL Â 520
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-350
V
Collector-Emitter Voltage
VCEO
-350
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb= 25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
-350
-350
-5
VBE(sat)
VBE(on)
V
V
V
-50
nA
-50
nA
-0.3
V
-0.35 V
-0.5
V
-1.0
V
-0.75 V
-0.85 V
-0.90 V
-2.0
V
IC=-100µA, IE=0
IC=-1mA, IB=0*
IE=-10µA, IC=0
VCB=-250V, IE=0
VEB=-3V, IC=0
IC=-10mA, IB=-1mA*
IC=-20mA, IB=-2mA*
IC=-30mA, IB=-3mA*
IC=-50mA, IB=-5mA*
IC=-10mA, IB=-1mA*
IC=-20mA, IB=-2mA*
IC=-30mA, IB=-3mA*
IC=-100mA, VCE=-10V*
Static Forward Current
hFE
Transfer Ratio
20
30
30
200
20
200
15
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
Output Capacitance
Cobo
6
pF
VCB=20V, f=1MHz
Transition Frequency
fT
50
MHz
IC=-10mA, VCE=-20V,
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3 - 172
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