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| FMMT6517 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 Â NOVEMBER 1995 7
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=100mA
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
FMMT6517
E
C
B
COMPLEMENTARY TYPE - FMMT6520
PARTMARKING DETAIL - 517
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
350
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb= 25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
V(BR)CBO 350
V(BR)CEO 350
V(BR)EBO
5
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
V
V
V
50
nA
50
nA
0.3
V
0.35
V
0.5
V
1.0
V
0.80
V
0.85
V
0.90
V
2.0
V
IC=100µA, IE=0
IC=1mA, IB=0*
IE=10µA, IC=0
VCB=250V, IE=0
VEB=5V, IC=0
IC=10mA, IB=1mA*
IC=20mA, IB=2mA*
IC=30mA, IB=3mA*
IC=50mA, IB=5mA*
IC=10mA, IB=1mA*
IC=20mA, IB=2mA*
IC=30mA, IB=3mA*
IC=100mA, VCE=10V*
Static Forward Current
hFE
Transfer Ratio
20
30
30
200
20
200
15
IC=1mA, VCE=10V
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
Output Capacitance
Cobo
6
pF
VCB=20V, f=1MHz
Transition Frequency
fT
50
MHz
IC=10mA, VCE=20V, f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3 - 171
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