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| FMMT614 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 Â APRIL 1996
FEATURES
* hFE up to 5k at Ic= 500mA
* Fast switching
* Low VCE(sat) at High Ic
PARTMARKING DETAILS Â 614
FMMT614
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120
300
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 100
130
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
14
V
IE=10µA, IC=0
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
0.02 10
nA
10
µA
100 nA
0.9
1.0
V
0.78 0.9
V
1.7
1.9
V
VCB=100V, IE=0
VCES=100V, IE=0
VEB=8V, IC=0
IC=500mA, IB=5mA*
IC=100mA, IB=0.1mA
IC=500mA, IB=5mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.5
1.8
V
IC=500mA, VCE=5V*
Static Forward Current hFE
15K
Transfer Ratio
5K
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
Output Capacitance
Cobo
6
pF
VCB=10V, f=100mHz
Switching Times
ton
toff
0.7
µs
IC=100µA, IB=0.1mA
2.5
µs
VS=10V
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.
3 - 147
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