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| FMMT596 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
PARTMARKING DETAIL Â 596
FMMT596
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-220
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-0.3
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
-220
-200
-5
VBE(sat)
V IC=-100µA
V IC=-10mA*
V IE=-100µA
-100 nA VCB=-200V
-100 nA VEB=-4V
-100 nA VCES=-200V
-0.2 V
-0.35 V
IC=-100mA,IB=-10mA
IC=-250mA,
IB=-25mA*
-1.0 V IC=-250mA,IB=-25mA*
Base-Emitter Turn-on Voltage
VBE(on)
-0.9 V IC=-250mA,
VCE=-10V*
Static Forward Current Transfer Ratio hFE
100
100
85
300
35
IC=-1mA, VCE=-10V
IC=-100mA,VCE=-10V*
IC=-250mA,VCE=-10V*
IC=-400mA,VCE=-10V*
Transition Frequency
fT
150
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3 - 143
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