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| FMMT591A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
Low equivalent on resistance RCE(sat) = 350m⦠at 1A
PART MARKING DETAIL - 91A
COMPLEMENTARY TYPE - FMMT491A
FMMT591A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage
V(BR)CBO -40
Collector-Emitter Breakdown Voltage V(BR)CEO -40
Emitter-Base Breakdown Voltage
V(BR)EBO -5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Cut-Off Current
ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Turn-on Voltage
VBE(on)
Static Forward Current Transfer Ratio hFE
300
300
250
160
30
Transition Frequency
fT
150
-100
-100
-100
-0.2
-0.35
-0.5
-1.1
-1.0
800
V IC=-100µA
V IC=-10mA*
V IE=-100µA
nA VCB=-30V
nA VEB=-4V
nA VCES=-30V
V IC=-100mA,IB=-1mA*
V IC=-500mA,IB=-20mA*
V IC=-1A, IB=-100mA*
V IC=-1A, IB=-50mA*
V IC=-1A, VCE=-5V*
IC=-1mA,
IC=-100mA*,
IC=-500mA*, VCE=-5V
IC=-1A*,
IC=-2A*,
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
3 - 139
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