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| FMMT591 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low Equivalent on resistance RCE(sat)=355m⦠at 1A*
COMPLEMENTARY TYPE- FMMT491
PARTMARKING DETAIL - 591
FMMT591
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
VALUE
-80
-60
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
UNIT CONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO -80
Collector-Emitter Breakdown
Voltage
V(BR)CEO -60
V IC=-100µA, IE=0
V IC=-10mA, IB=0*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
V(BR)EBO -5
ICBO
IEBO
ICES
VCE(sat)
VBE(sat)
VBE(on)
hFE
100
100
80
15
fT
150
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
300
V IE=-100µA, IC=0
nA VCB=-60V
nA VEB=-4V, IC=0
nA VCES=-60V
V IC=-500mA,IB=-50mA*
V IC=-1A, IB=-100mA*
V IC=-1A, IB=-100mA*
V IC=-1A, VCE=-5V*
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3 - 137
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