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| FMMT560 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FMMT560
ISSUE 1 â NOVEMBER 1998
FEATURES
*
Excellent hFE characterisristics up to IC=50mA
*
Low Saturation voltages
PARTMARKING DETAIL â 560
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-500
V
-500
V
-5
V
-500
mA
-150
mA
500
mW
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -500
V
IC=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO) -500
V
IC=-10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
V(BR)EBO -5
ICBO ; ICES
IEBO
VCE(sat)
VBE(sat)
V
-100 nA
-100 nA
-0.2 V
-0.5 V
-0.9 V
IE=-100µA
VCB=-500V; VCE=-500V
VEB=-5V
IC=-20mA, IB=-2mA *
IC=-50mA, IB=-10mA *
IC=-50mA, IB=-10mA *
Base-Emitter Turn On Voltage
Static Forward Current Transfer
Ratio
VBE(on)
hFE
Transition Frequency
fT
-0.9
100 300
80
300
15 typ
60
V
MHz
IC=-50mA, VCE=-10V *
IC=-1mA, VCE =-10V
IC=-50mA, VCE =-10V *
IC=-100mA, VCE =-10V*
VCE=-20V, IC=-10mA,
f=50MHz
Output Capacitance
Cobo
8
pF
Switching times
ton
110 typ.
ns
toff
1.5 typ.
µs
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
VCB=-20V, f=1MHz
VCE=-100V, IC=-50mA,
IB1=-5mA, IB2=10mA
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