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| FMMT5550 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS | |||
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 - NOVEMBER 1996 7
PARTMARKING DETAILS - FMMT5550 Â 1FZ
FMMT5551 Â ZG1
COMPLEMENTARY TYPES - FMMT5550 Â FMMT5400
FMMT5551 Â FMMT5401
FMMT5550
FMMT5551
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
FMMT5550 FMMT5551
160
180
140
160
6
6
600
600
330
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMT5550 FMMT5551
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT
Collector-Base
V(BR)CBO
160
Breakdown Voltage
180
V
Collector-Emitter
V(BR)CEO
140
Breakdown Voltage
160
V
Emitter-Base
V(BR)EBO
6
Breakdown Voltage
6
V
Collector Cut-Off
ICBO
Current
100
nA
100
µA
50 nA
50 µA
Static Forward
hFE
Current Transfer
Ratio
60
80
60 250 80 250
20
30
Collector-Emitter
VCE(sat)
Saturation Voltage
0.15
0.15 V
0.25
0.20 V
Base-Emitter
VBE(sat)
Saturation Voltage
1.0
1.0 V
1.2
1.2 V
Transition
fT
100 300 100 300 MHz
Frequency
Output Capacitance Cobo
Small Signal
hfe
6.0
6.0 pF
50 200 50 260
Noise Figure
NF
10
8 dB
 Periodic Sample Test Only
PAGE NUMBER
CONDITIONS.
IC=100µA
IC=1mA
IE=10µA*
VCB=100V
VCB=100V, TA=100°C
VCB=120V
VCB=120V, TA=100°C
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, VCE=10V
f=100MHz
VCB=10V, f=1MHz
IC=1mA, VCE=10V
f=1KHz Â
IC=250µA, VCE=5V,
RS=1Kâ¦
f=10Hz to 15.7KHz
.
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