FMMT5209 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JULY 1995
7
PARTMARKING DETAILS:
FMMT5209 - 2Q
FMMT5210 - 2R
FMMT5209
FMMT5210
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL FMMT5209 FMMT5210 UNIT
Collector-Base Voltage
V_CBO
50
V
Collector-Emitter Voltage
V_CEO
50
V
Emitter-Base Voltage
V_EBO
4.5
V
Continuous Collector Current
I_C
50
mA
Power Dissipation
P_tot
330
mW
Operating and Storage Temperature Range T_j:T_stg
-55 TO +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
FMMT5209 FMMT5210
SYMBOL _{MIN. MAX. MIN. MAX.} UNIT CONDITIONS.
Collector-Base
I_CBO
Cut-Off Current
50
50
nA V_CB=35V, I_E=0
Emitter-Base
I_EBO
Cut-Off Current
50
50
nA V_EB=3V, I_C=0
Collector-Emitter
V_CE(sat)
Saturation Voltage
700
700 mV I_C=10mA, I_B=1mA
Base-Emitter ON
Voltage
V_BE(on)
850
850 mV I_C=1mA, V_CE=5V
Static Forward
h_FE
Current Transfer
Ratio
Transition Frequency f_T
100 300 200 600
I_C=100µA, V_CE=5V
150
250
I_C=1mA, V_CE=5V
150
250
I_C=10mA, V_CE=5V*
30
30
MHz I_C=0.5mA, V_CE=5V,
f=20MHz
Small Signal Current h_fe
Transfer Ratio
150 600 250 900 MHz I_C=1mA, V_CE=5V, f=1KHz
Noise Figure
N
3
2
dB I_C=200µA, V_CE=5V, R_g=2KΩ,
f=30Hz to 15KHz at -3dB
points
4
3
dB I_C=200µA, V_CE=5V, R_g=2KΩ,
f=1KHz to ∆f=200Hz
Output Capacitance C_obo
4
4
pF V_CB=5V, I_E=0, f=140KHz