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| FMMT5179 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* High fT=900MHz Min
* Max capacitance=1pF
* Low noise 4.5dB
PARTMARKING DETAIL - 179
FMMT5179
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
2.5
V
Continuous Collector Current
IC
50
mA
Power Dissipation
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Sustaining VCEO(SUS) 12
Voltage
V
IC= 3mA, IB=0
Collector-Base Breakdown V(BR)CBO 20
Voltage
Emitter-Base Breakdown
Voltage
V(BR)EBO 2.5
V
IC= 1µA, IE=0
V
IE=10µA, IC=0
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
ICBO
0.02
µA VCB=15V, IE=0
1.0
µA VCB=15V, IE=0, Tamb=150°C
hFE
25
250
IC=3mA, VCE=1V
Collector-Emitter Saturation VCE(sat)
Voltage
0.4
V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=10mA, IB=1mA
Transition Frequency
fT
900
2000
Collector-Base Capacitance Ccb
1
Small Signal Current Gain
hfe
25
300
Collector Base Time Constant rbÂCc
3
14
Noise Figure
NF
4.5
Common-Emitter Amplifier Gpe
15
Power Gain
Spice parameter data is available upon request for this device
MHz
pF
ps
dB
dB
IC=5mA, VCE=6V, f=100MHz
IE=0, VCB=10V, f=1MHz
IC=2mA, VCE=6V, f=1KHz
IE=2mA, VCB=6V, f=31.9MHz
IC=1.5mA, VCE=6V
RS=50â¦, f=200MHz
IC=5mA, VCE=6V
f=200MHz
3 - 169
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