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| FMMT494 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 7
PARTMARKING DETAIL Â 494
FMMT494
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
140
V
120
V
5
V
1
A
2
A
200
mA
500
mW
-55 to +150
°C
UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO 140
V
VCEO(sus) 120
V
V(BR)EBO
5
V
Collector Cut-Off Currents
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
100
nA
100
nA
100
nA
0.2
V
0.3
V
Base-Emitter
Saturation Voltage
VBE(sat)
1.1
V
IC=100µA
IC=10mA*
IE=100µA
VCB=120V
VCE=120V
VEB=4V
IC=250mA, IB=25mA*
IC=500mA, IB=50mA*
IC=500mA, IB=50mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=500mA, VCE=10V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
100
100
300
60
20
IC=1mA, VCE=10V*
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
fT
100
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Cobo
Breakdown Voltage
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3 - 121
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