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| FMMT491A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 Â OCTOBER 1995
FEATURES
* Very Low Equivalent Resistance, RCE(sat) 195m⦠at 1A
FMMT491A
E
C
COMPLEMENTARY TYPE Â FMMT591A
B
PARTMARKING DETAIL Â 41A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
40
V
40
V
5
V
1
A
2
A
500
mW
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 40
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 40
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA
Cut-Off Currents
ICBO ,ICES
100
nA
VCB=30V,VCES=30V
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Saturation Voltages
VCE(sat)
0.3
V
0.5
V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
VBE(sat)
Base Emitter Turn On Voltage VBE(on)
1.1
V
1.0
V
IC=1A, IB=100mA*
IC=1A, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
300
300
900
200
35
IC=1mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
Transition Frequency
fT
150
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Cobo
Breakdown Voltage
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
3 - 117
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