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| FMMT491 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance; RCE(sat) 210m⦠at 1A
FMMT491
E
C
COMPLEMENTARY TYPE - FMMT591
B
PARTMARKING DETAIL - 491
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
80
V
60
V
5
V
1
A
2
A
500
mW
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 60
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
100
nA
100
nA
100
nA
0.25
V
0.50
V
1.1
V
VCB=60V
VCES=60V
VEB=4V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=1A, VCE=5V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
100
100
300
80
30
IC=1mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
fT
150
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Cobo
Breakdown Voltage
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3 - 115
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