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| FMMT458 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 Â OCTOBER 1995
FEATURES
* 400 Volt VCEO
COMPLEMENTARY TYPE Â FMMT558
PARTMARKING DETAIL Â 458
FMMT458
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
225
mA
Peak Pulse Current
ICM
1
A
Base Current
IB
200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 400
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 400
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
100
nA
100
nA
100
nA
0.2
V
0.5
V
0.9
V
VCB=320V
VCE=320V
VEB=4V
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
IC=50mA, IB=5mA*
Base-Emitter
Turn On Voltage
VBE(on)
0.9
V
IC=50mA, VCE=10V*
Static Forward
Current Transfer Ratio
Transition Frequency
hFE
100
100
300
15
IC=1mA, VCE=10V
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
fT
50
MHz
IC=10mA, VCE=20V
f=20MHz
Collector-Base
Cobo
Breakdown Voltage
5
pF
VCB=20V, f=1MHz
Switching times
ton
135 Typical
ns
IC=50mA, VCC=100V
toff
2260 Typical ns
IB1=5mA, IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
3 - 112
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