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| FMMT451 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
HIGH PERFROMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance; RCE(sat) 400m⦠at 1A
* 1 Amp continuous current
* Ptot= 500 mW
COMPLEMENTARY TYPE Â FMMT551
PARTMARKING DETAIL Â 451
FMMT451
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
VALUE
80
60
5
2
1
200
500
-55 to +150
CONDITIONS.
UNIT
V
V
V
A
A
mA
mW
°C
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V
IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60
V
IC=10mA*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V
IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
0.1
µA
0.1
µA
0.35 V
VCB=60V
VEB=4V
IC=150mA, IB=15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.1
V
IC=150mA, IB=15mA*
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
50
150
10
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
150
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3 - 108
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