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| FMMT4400 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS | |||
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SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 Â FEBRUARY 1997
7
FMMT4400
FMMT4401
PARTMARKING DETAILS:
FMMT4400 - 1KZ
FMMT4401 - 1L
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
FMMT4400 FMMT4401
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS
Collector-Emitter
V(BR)CEO
40
40
Breakdown Voltage
V IC=1mA, IB=0
Collector-Base
V(BR)CBO
60
60
Breakdown Voltage
V IC=0.1mA, IE=0
Emitter-Base
V(BR)EBO
6
6
Breakdown Current
V IE=0.1mA, IC=0
Collector-Emitter
ICEX
Cut-Off Current
Base Cut-Off
IBEX
Current
Static Forward
hFE
Current
TransferRatio
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
VCE(sat)
VBE(sat)
fT
0.1
0.1
20
20
40
40
80
50 150 100
20
40
0.4
0.75
0.75 0.95 0.75
1.2
200
250
0.1
µA VCE=35V
VEB(off) =0.4V
0.1
µA VCE=35V
VEB(off) =3V
IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
300
IC=150mA, VCE=1V*
IC=500mA, VCE=2V*
0.4
V IC=150mA,IB=15mA*
0.75 V IC=500mA,IB=50mA*
0.95 V IC=150mA,IB=15mA*
1.2
V IC=500mA,IB=50mA*
MHz IC=20mA,VCE=10V
f=100kHz
Output Capacitance Cobo
6.5
6.5
pF VCB=5 V,IE=0
f=100kHz
Input Capacitance Cibo
30
30
pF VBE=0.5V, IC=0
f=100kHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
PAGE NUMBER
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