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| FMMT413 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR AVALANCHE TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 Â MARCH 1996
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL - 413
FMMT413
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
100
mA
Peak Collector Current (25ns Pulse Width)
ICM
50
A
Power Dissipation
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CES
150
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 50
V
IC=10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
6
V
IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
0.1
µA
0.1
µA
0.15 V
VCB=120V
VEB=4V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.8
V
IC=10mA, IB=1mA
Current in Second
IUSB
22
Breakdown (Pulsed)
31
Static Forward Current hFE
50
Transfer Ratio
A
VC=110V, CCE=4.7nF*
A
VC=130V, CCE=4.7nF*
IC=10mA, VCE=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB)monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
The FMMT413 device is a development product. Samples availability and release to production
scheduled for June 1996
3 - 102
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