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| FMMT4126 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 Â MARCH 1995
7
PARTMARKING DETAIL Â ZE
FMMT4126
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-4
V
Continuous Collector Current
IC
-200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -25
V
IC=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -25
V
IC=-1mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -4
V
IE=-10µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
-50
nA
VCB=-20V
-50
nA
VEB=-3V
0.4
V
IC=-50mA, IB=-5mA*
Base-Emitter
SaturationVoltage
VBE(sat)
0.95 V
IC=-50mA, IB=-5mA*
Static Forward
hFE
Current Transfer Ratio
Transistion Frequency
fT
Output Capacitance
Cobo
Input Capacitance
Cibo
Noise Figure
N
120
360
60
IC=-2mA, VCE=-1V*
IC=-50mA, VCE=-1V*
250
MHz IC=-10mA, VCE=-20V, f=100MHz
4.5
pF
VCB=-5V, IE=0, f=140KHz
10
pF
VBE=-0.5V, IE=0, f=140KHz
4
dB
IC=-200µA, VCE=-5V, Rg=-2kâ¦
f=30Hz to 15KHz at 3dB points
Small Signal Current
hfe
Transfer
120
180
IC=-2mA, VCE=-1V, f=1KHz
SWITCHING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL TYP.
UNIT CONDITIONS
Delay Time
Rise Time
Storage Time
Fall Time
td
25
ns
VCC=-3V, VBE(off=) -0.5V
tr
18
ns
IC=-10mA, IB1=-1mA
ts
140
ns
VCC=-3V, IC=-10mA
tf
15
ns
IB1=IB2=-1mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
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