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| FMMT4124 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 Â MARCH 94
7
PARTMARKING DETAIL Â ZC
FMMT4124
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 30
V
IC=10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 25
V
IC=1mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
50
nA
VCB=20V
50
nA
VEB=3V
0.3
V
IC=50mA, IB=5mA*
Base-Emitter
SaturationVoltage
VBE(sat)
0.95 V
IC=50mA, IB=5mA*
Static Forward
hFE
Current Transfer Ratio
Transistion Frequency
fT
Output Capacitance
Cobo
Input Capacitance
Cibo
Noise Figure
N
120
360
60
IC=2mA, VCE=1V*
IC=50mA, VCE=1V*
300
MHz IC=10mA, VCE=20V, f=100MHz
4
pF
VCB=5V, IE=0, f=140KHz
8
pF
VBE=0.5V, IE=0, f=140KHz
6
dB
IC=200µA, VCE=5V, Rg=2kâ¦
f=30Hz to 15KHz at 3dB points
Small Signal Current
hfe
Transfer
120
480
IC=2mA, VCE=1V, f=1KHz
SWITCHING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL TYP.
UNIT CONDITIONS
Delay Time
Rise Time
Storage Time
Fall Time
td
24
ns
VCC=3V, VBE(off=) 0.5V
tr
13
ns
IC=10mA, IB1=1mA
ts
125
ns
VCC=3V, IC=10mA
tf
11
ns
IB1=IB2=1mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
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