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FMMT2907 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR
SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 3 – FEBRUARY 1996 7
FEATURES
* Fast switching
COMPLIMENTARY TYPES - FMMT2907 –
- FMMT2907A –
FMMT2222
FMMT2222A
FMMT2907
FMMT2907A
E
C
PARTMARKING DETAIL -
FMMT2907 – 2BZ
FMMT2907A – 2F
FMMT2907R – 4P
FMMT2907AR – 5P
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
B
SOT23
FMMT2907 FMMT2907A
-60
-40
-60
-5
-600
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL FMMT2907 FMMT2907A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -40
Breakdown Voltage
-60
V
IC=-10µA, IE=0
Collector-Emitter
V(BR)CEO -60
-60
V
IC=-10mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO -5
Breakdown Voltage
-5
V
IE=-10µA, IC=0
Collector-Emitter
ICEX
Cut-Off Current
-50
-50 nA VCE=-30V, VBE=-0.5V
Collector Cut-Off
ICBO
Current
Base Cut-Off Current IB
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter
VBE(sat)
Saturation Voltage
Static Forward
hFE
Current Transfer
Ratio
Transition
fT
Frequency
-20
-10 nA VCB=-50V, IE=0
-20
-10 µA VCB=-50V, IE=0, Tamb=150°C
-50
-50 nA VCE=-30V, VBE=-0.5V
-0.4
-0.4 V
IC=-150mA, IB=-15mA*
-1.6
-1.6 V
IC=-500mA, IB=-50mA*
-1.3
-1.3 V
IC=-150mA, IB=-15mA*
-2.6
-2.6 V
IC=-500mA, IB=-50mA*
35
75
50
100
75
100
100 300 100 300
30
50
IC=-0.1mA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
200
200
MHz IC=-50mA, VCE=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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