FMMT2484 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 – MARCH 94
7
FEATURES
* 60 Volt V_CEO
PARTMARKING DETAIL – 4G
FMMT2484
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
SOT23
VALUE
60
60
6
200
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO 60
V
I_C=10µA, I_E=0
Collector-Emitter
Breakdown Voltage
V_(BR)CEO 60
V
I_C=10mA, I_B=0*
Emitter-Base
Breakdown Voltage
V_(BR)EBO
6
V
I_E=10µA, I_C=0
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
I_CBO
I_EBO
V_CE(sat)
10
nA
10
µA
10
nA
0.35 V
V_CB=45V, I_E=0
V_CB=45V, I_E=0, T_amb=150°C
VBE=5V
I_C=1mA, I_B=100µA*
Base-Emitter Voltage
Static Forward
Current Transfer
Ratio
Output Capacitance
Input Capacitance
Noise Figure
V_BE
h_FE
C_obo
C_ibo
N
0.95 V
30
100
500
20
175
200
250
800
6
pF
6
pF
3
dB
I_C=1mA, V_CE=5V*
I_C=1µA, V_CE=5V*
I_C=10µA, V_CE=5V*
I_C=10µA, V_CE=5V, T_amb=55°C
I_C=100µA, V_CE=5V*
I_C=500µA, V_CE=5V*
I_C=1mA, V_CE=5V*
I_C=10mA, V_CE=5V*
V_CB=5V, I_E=0, f=140KHz
V_BE=0.5V, I_E=0, f=140KHz
I_C=200µA, V_CE=5V, R_g=2kΩ
f=1kHz, f=200Hz
3
dB
I_C=200µA, V_CE=5V, R_g=2kΩ
f=30Hz to 15kHz at -3dB points
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%