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| FMMT2369 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS | |||
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SOT23 NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
FMMT2369
FMMT2369A
ISSUE 3 Â AUGUST 1995
APPLICATIONS
These devices are suitable for use in high speed, low current
switching applications
E
C
PARTMARKING DETAILS
FMMT2369 - 1J
FMMT2369R - 9R
FMMTA2369A - P5
FMMTA2369AR - 9A
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
4.5
V
Continuous Collector Current
IC
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL FMMT2369 FMMT2369A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 40
40
V
IC=10µA, IE=0
Breakdown Voltage
Collector-Emitter V(BR)CEO 15
15
V
IC=10mA, IB=0*
Breakdown Voltage V(BR)CES 40
40
V
IC=10µA, VBE=0
Emitter-Base
V(BR)EBO 4.5
Breakdown Voltage
4.5
V
IE=10µA, IC=0
Collector Cut-Off ICBO
Current
400
25 nA VCB=20V, IE=0
Collector-Emitter VCE(sat)
Saturation Voltage
0.25
0.20 V
IC=10mA, IB=1mA*
Base-Emitter
VBE(sat)
Saturation Voltage
0.7 0.85 0.7 0.85 V
IC=10mA, IB=1mA*
Static Forward
hFE
Current Transfer
Ratio
Output Capacitance Cobo
Turn-on Time
ton
Turn-off Time
toff
Storage Time
ts
40 120 40 120
20
20
20
IC=10mA, VCE=1V*
IC=10mA, VCE=1V, Tamb=-55°C*
IC=100mA, VCE=1V*
IC=100mA, VCE=2V*
4
4
pF VCB=5V, IE=0, f=140KHz
12
12 ns VCC=3V, VBE(off=) 1.5V IC=10mA,
IB1=3mA (See tON circuit)
18
18 ns VCC=3V, IC=10mA, IB1=3mA
IB2=1.5mA(See tOFF circuit)
13
13 ns IC=IB1= IB2=10mA
(See Storage test circuit)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
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