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| FMMD914 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE | |||
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SOT23 SILICON PLANAR HIGH SPEED
SWITCHING DIODE
ISSUE 2 - OCTOBER 1995
DIODE PIN CONNECTION
PARTMARKING DETAIL Â 5D
FMMD914
2
1
3
!
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Working Peak Reverse Voltage
Average Rectified Forward Current at
Tamb=25°C
Repetitive Peak Forward Current
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
SYMBOL
VRWM
IF(AV)
IFRM
Ptot
Tj:Tstg
VALUE
75
75
225
330
-55 to +150
UNIT
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Reverse Breakdown Voltage VBR
Forward Voltage
VF
Static Reverse Current
IR
75
V
IR=100µA
1
V
IF=10mA
25
nA VR=20V
50
µA VR=20V, Tamb=150 °C
Reverse Recovery Time
trr
8
ns
4
ns
Total Capacitance
CT
Forward Recovery Voltage VFM(REC)
Rectification Efficiency
ηr
45
4
pF
2.5
V
%
Spice parameter data is available upon request for this device
IF= IRM=10mA,IRR =1mA
RL=100â¦
IF=10mA,IRR =1mA, VR=6V
RL=100â¦
VR=0, f=1MHz
IF=50mA, RL=50â¦
VR=2V,RL=5kâ¦, CL=20pF
Zsource=50â¦, f=100MHz
PAGE NUMBER
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