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| FMMD6050 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE | |||
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SOT23 SILICON PLANAR HIGH SPEED
SWITCHING DIODE
ISSUE 2 - OCTOBER 1995
DIODE PIN CONNECTION
PARTMARKING DETAIL Â 5A
!
FMMD6050
2
1
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Breakdown Voltage Voltage (IR=100µA)
V(BR)
70
V
Peak Forward Current
IF
200
mA
Peak Forward Surge Current
IFM
500
mA
Power Dissipation at Tamb = 25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltage
Forward Voltage
Reverse Current
V(BR)
VF
IR
70
V
IR=10µA
0.5
0.7
V
IF=1mA
0.8
1.1
V
IF=100mA
0.1
µA VR=50V
Recovery Time*
trr
5
ns
Diode Capacitance
Cd
2.5
pF
*For switching test circuit diagram see FMMD7000 datasheet
IF= IR=10mA,
IR(REC)=1 mA
VR=0, f=1MHz
PAGE NUMBER
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