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| FCX596 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
PARTMARKING DETAIL Â P96
FCX596
D
ABSOLUTE MAXIMUM RATINGS.
S
D
G
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-220
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-0.3
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Saturation
Voltages
Base-Emitter Turn-on Voltage
Static Forward Current Transfer Ratio
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
VBE(sat)
VBE(on)
hFE
fT
-220
-200
-5
100
100
85
35
150
-100
-100
-100
-0.2
-0.35
-1.0
-0.9
300
V IC=-100µA
V IC=-10mA*
V IE=-100µA
nA VCB=-200V
nA VEB=-4V
nA VCES=-200V
V IC=-100mA,IB=-10mA
V IC=-250mA IB=-25mA*
V IC=-250mA,IB=-25mA*
V IC=-250mA,VCE=-10V*
IC=-1mA, VCE=-10V
IC=-100mA,VCE=-10V*
IC=-250mA,VCE=-10V*
IC=-400mA,VCE=-10V,
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical Characteristics graphs see FMMT596 datasheet.
3 - 95
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