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| FCX593 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
FCX593
C
COMPLIMENTARY TO FMMT493
PARTMARKING DETAIL - P93
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Cut-Off Currents
Saturation Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
-120
-100
-5
VBE(sat)
-100
-100
-100
-0.2
-0.3
-1.1
V IC=-100µA
V IC=-10mA*
V IE=-100µA
nA VCB=-100V
nA VEB=-4V
nA VCES=-100V
V IC=-250mA,IB=-25mA*
V IC=-500mA IB=-50mA*
V IC=-500mA,IB=-50mA*
Base-Emitter Turn-on Voltage
VBE(on)
-1.0 V IC=-1mA, VCE=-5V*
Static Forward Current Transfer Ratio hFE
100
100
100 300
50
IC=-1mA, VCE=-5V
IC=-250mA,VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
Transition Frequency
fT
50
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
5
pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical Characteristics graphs see FMMT593 datasheet
3 - 94
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