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| FCX591A Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
PART MARKING DETAIL - P2
COMPLEMENTARY TYPE - FCX491A
FCX591A
C
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
V(BR)CBO -40
V(BR)CEO -40
V(BR)EBO -5
ICBO
IEBO
ICES
VCE(sat)
VBE(sat)
VBE(on)
hFE
300
300
250
160
30
fT
150
-100
-100
-100
-0.2
-0.35
-0.5
-1.1
-1.0
800
V
V
V
nA
nA
nA
V
V
V
V
V
MHz
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-30V
VEB=-4V
VCES=-30V
IC=-100mA,IB=-1mA*
IC=-500mA IB=-20mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-50mA*
IC=-1A, VCE=-5V*
IC=-1mA,
IC=-100mA*,
IC=-500mA*, VCE=-5V
IC=-1A*,
IC=-2A*,
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT591A datasheet
3 - 93
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