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| FCX495 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
7
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
FCX495
C
PARTMARKING DETAIL â N95
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
170
V
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
ICM
2
A
Base Current
IB
200
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
170
V
VCEO(sus)
150
V
V(BR)EBO
5
V
Collector Cut-Off
Currents
ICBO, ICES
100
nA
IC=100µA
IC=10mA*
IE=100µA
VCB=150V, VCE=150V
Emitter Cut-Off Current
Emitter Saturation
Voltages
Base-Emitter
Turn On Voltage
IEBO
VCE(sat)
VBE(sat)
VBE(on)
100
nA
0.2
V
0.3
V
1.0
V
1.0
V
VEB=4V
IC=250mA, IB=25mA*
IC=500mA, IB=50mA*
IC=500mA, IB=50mA*
IC=500mA, VCE=10V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
100
100
300
50
10
IC=1mA, VCE=10V
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
100
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
10
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMT495 Datasheet
3 - 89
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