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| FCX493 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 7
COMPLEMENTARY TYPE â FCX593
PARTMARKING DETAIL â N93
FCX493
C
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
Breakdown Voltages
V(BR)CBO
120
VCEO(sus) 100
V(BR)EBO
5
Collector Cut-Off Currents
ICBO
100
ICES
100
Emitter Cut-Off Current
IEBO
100
Collector-Emitter
VCE(sat)
0.3
Saturation Voltage
0.6
Base-Emitter
Saturation Voltage
VBE(sat)
1.15
Base-Emitter
VBE(on)
1.0
Turn On Voltage
Static Forward Current
Transfer Ratio
hFE
100
100
300
60
20
Transition Frequency
fT
150
Collector-Base
Cobo
10
Breakdown Voltage
120
V
100
V
5
V
1
A
2
A
200
mA
1
W
-65 to +150
°C
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=100V
VCES=100V
VEB=4V
IC=500mA, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=1A, VCE=10V
IC=1mA, VCE=10V*
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
IC=50mA, VCE=10V
f=100MHz
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical Characteristics graphs see FMMT493 datasheet.
3 - 88
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