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| FCX491A Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 1 Amp continuous current
FCX491A
C
COMPLEMENTARY TYPE-
PARTMARKING DETAILS -
FCX591A
N2
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
IC
1
A
Continuous Collector Current
ICM
2
A
Power Dissipation
PTOT
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Currents
Emitter Cut-Off Current
Emitter Saturation Voltages
Base-Emitter
Turn-On Voltage
V(BR)CBO 40
V(BR)CEO 40
V(BR)EBO 5
ICBO,
ICES
IEBO
VCE(sat)
VBE(sat)
VBE(on)
V
IC=100µA
V
IC=10mA*
V
IE=100µA
100 nA VCB=30V,
100 nA VCE=30V
100 nA VEB=4V
0.3
V
IC=500mA, IB=50mA*
0.5
V
IC=1A, IB=100mA*
1.1
V
IC=1A, IB=100mA*
1.0
V
IC=1A, VCE=5V*
Static Forward Current
Transfer
Transitional Frequency
hFE
300
300
900
200
35
IC=1mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
fT
150
MHz IC=50mA, VCE=10V
f=100MHz
Collector-Base Breakdown
Voltage
Cobo
10
pF VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
For typical Characteristics graphs see FMMT491A datasheet
3 - 87
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