FCX1053A Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTOR

SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - MARCH 1999
FEATURES
*
2W POWER DISSIPATION
*
10A Peak Pulse Current
*
Excellent HFE Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage E.g. 21mv Typ.
*
Extremely Low Equivalent On-resistance;

 R_CE(sat) 78m at 4.5A
Partmarking Detail -
053
FCX1053A
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at T_amb=25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
150
V
75
V
5
V
10
A
3
A
1†
W
2‡
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle  2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.