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| BST61 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 4 â MARCH 1996
7
FEATURES
* Fast Switching
* High hFE
BST61
C
PARTMAKING DETAIL â BS2
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Pea Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
SOT89
VALUE
-80
-60
-10
-1.5
-500
-100
1
-65 to +150
UNIT
V
V
V
A
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60
V
IC=-10mA, IB=0*
Emitter-Base Breakdown V(BR)EBO -10
Voltage
V
IE=-10µA, IC=0
Emitter Cut-Off Current IEBO
Collector-Emitter
ICES
Cut-Off Current
-10
µA
VEB=-8V, IE=0
-10
µA
VCE=-60V, IC=0
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
-1.3
V
-1.3
V
-1.9
V
IC=500mA, IB=-0.5mA
IC=500mA, IB=-0.5mA
Tj=150°C
IC=-500mA, IB=-0.5mA
Static Forward Current hFE
1K
Transfer Ratio
2K
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
Turn On Time
Turn Off Time
ton
400 Typical ns
IC=500mA
toff
1.5K Typical ns
IBon=IBoff=-0.5mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FZTA63 (SOT223) datasheet.
3 - 81
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