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| BST51 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 â JANUARY 1996
FEATURES
* Fast Switching
* High hFE
BST51
C
PARTMAKING DETAIL â AS2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Pea Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
E
C
B
SOT89
VALUE
80
60
10
1.5
500
100
1
-65 to +150
UNIT
V
V
V
A
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
80
V
IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
60
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
V
IE=10µA, IC=0
Emitter Cut-Off Current
IEBO
Collector-Emitter
ICES
Cut-Off Current
10
µA
VEB=8V, IE=0
10
µA
VCE=60V, IC=0
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
1.3
V
1.3
V
1.9
V
IC=500mA, IB=0.5mA
IC=500mA, IB=0.5mA
Tj=150°C
IC=500mA, IB=0.5mA
Static Forward Current
hFE
1K
Transfer Ratio
2K
Turn On Time
ton
400 Typical
ns
Turn Off Time
toff
1.5K Typical
ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
For typical graphs see FMMT38A datasheet
IC=150mA, VCE=10V*
IC=-500mA, VCE=-10V*
IC=500mA
IBon=IBoff=0.5mA
3 - 79
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