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| BST40 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 â JANUARY 1996 7
COMPLEMENTARY TYPE â BST15
PARTMAKING DETAIL â AT2
BST40
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E
C
B
SOT89
VALUE
300
250
5
1
500
1
-65 to +150
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
300
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
250
V
IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA, IC=0
Emitter Cut-Off Current
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
ICBO
VCE(sat)
10
µA
VEB=5V, IE=0
20
nA
VCB=300V
0.5
V
IC=50mA, IB=4mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.3
V
IC=50mA, IB=4mA
Static Forward Current
hFE
40
Transfer Ratio
IC=20mA, VCE=10V*
Transition Frequency
fT
70
MHz
IC=10mA, VCE=10V,
f=5MHz
Output Capacitance
Cobo
2
pF
Input Capacitance
Cibo
30
pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMTA42 datasheet.
VCB=10V, f=1MHz
VEB=5V, f=1MHz
3 - 78
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