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| BST39 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistors | |||
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 â JUNE 1996
7
FEATURES
* Fast Switching
* High hFE.
BST39
C
COMPLEMENTARY TYPE â BST16
PARTMAKING DETAIL â
AT1
ABSOLUTE MAXIMUM RATINGS.
E
C
B
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
400
V
IC=10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
350
V
IC=1mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µA
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
VCE(sat)
20
nA
VCB=300V
0.5
V
IC=50mA, IB=4mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.3
V
IC=50mA, IB=4mA
Static Forward Current
hFE
40
Transfer Ratio
IC=20mA, VCE=10V*
Output Capacitance
Input Capacitance
Transition Frequency
Cobo
2
pF
Cibo
20
pF
fT
70
MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMT458 datasheet.
VCB=10V, f=1MHz
VEB=10V, f=1MHz
IC=10mA, VCE=10V,
f=5MHz
3 - 77
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