BST16 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996
7
FEATURES
* High V_CEO
* Low saturation voltage
BST16
C
COMPLEMENTARY TYPE – BST39
PARTMARKING DETAIL – BT2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
E
C
B
SOT89
VALUE
-350
-300
-4
-1
-500
1
-65 to +150
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO -350
V
I_C=-100µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO -300
V
I_C=-1mA
Emitter-Base
Breakdown Voltage
V_(BR)EBO -4
V
I_E=-100µA
Collector Cut-Off
Current
I_CBO
-1
µA
V_CB=-280V
Collector Cut-Off
I_CEO
Current
-50
µA
V_CB=-250V
Emitter Cut-Off Current I_EBO
Collector-Emitter
Saturation Voltage
V_CE(sat)
Static Forward Current h_FE
30
Transfer Ratio
-20
µA
- 2.0 V
-0.5 V
150
V_EB=-4V
I_C=-50mA, I_B=-5mA*
I_C=-30mA, I_B=-3mA*
I_C=-50mA, V_CE=-10V*
Transition Frequency f_T
15
MHz
I_C=-10mA, V_CE=-10V*
f = 30MHz
Output Capacitance
C_obo
15
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
V_CB=-10V, f=1MHz
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