BSS82B Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 95 7
PARTMARKING DETAILS - BSS82B - CL
BSS82C - CM
BSS82B
BSS82C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Peak Pulse Current
I_CM
Power Dissipation at T_amb=25°C
P_TOT
Operating and Storage Temperature Range t_j:t_stg
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-60
V
-60
V
-5
V
-800
mA
330
mW
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO -60
V
I_C=-10µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO -60
V
I_C=-10mA*
Emitter-Base
Breakdown Voltage
V_(BR)EBO -5
I_E=-10µA
Collector Cut-Off
Current
Emitter Cut-Off
Current
I_CBO
I_EBO
-10
nA
V_CB=-50V,
-10
µA
V_CB=-50V, T_amb=150 °C
-10
nA
V_BE=-3V
Collector-Emitter
Saturation Voltage
V_CE(sat)
-0.4 V
-1.6 V
I_C=-150mA,I_B=-15mA*
I_C=-500mA,I_B=50mA*
Static Forward
Current
Transfer Ratio
BSS80B h_FE
BSS80C
40
120
100 300
I_C=150mA,V_CE=10V
I_C=150mA,V_CE=10V
Transition Frequency
f_T
200
MHz V_CE=-20V,I_C=-50mA
f=100MHz
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
C_obo
t_d
t_r
t_s
t_f
8
pF
V_CB=-10V,f=1MHz
10
ns
40
ns
V_CC=-30V, I_C=-150mA
80
ns
I_B1=-I_B2=-15mA
30
ns
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
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