BSS80B Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 95 7
PARTMARKING DETAIL — BSS80B - CH
BSS80C - CJ
BSS80B
BSS80C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
P_TOT
t_j:t_stg
SOT23
VALUE
-60
-40
-5
-800
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
Collector-Base
Breakdown Voltage
V_(BR)CBO -60
Collector-Emitter
Breakdown Voltage
V_(BR)CEO -40
Emitter-Base
Breakdown Voltage
V_(BR)EBO -5
Collector Cut-Off
Current
I_CBO
-10
-10
Emitter Cut-Off
Current
I_EBO
-10
Collector-Emitter
Saturation Voltage
V_CE(sat)
-0.4
-1.6
Static Forward
Current
Transfer Ratio
BSS80B h_FE
BSS80C
40
120
100 300
Transition Frequency
f_T
200
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
C_obo
8
t_d
10
t_r
40
t_s
80
t_f
30
UNIT
V
V
nA
µA
nA
mV
V
MHz
pF
ns
ns
ns
ns
CONDITIONS.
IC=-10µA
I_C=-10mA
IE=-10mA
V_CB=-50V,
V_CB=-50V,
T_a=150^oC
V_BE=-3V
I_C=-150mA,V_CE=-10V
I_C=-150mA,VCE=-10V
I_C=150mA,V_CE=10V
I_C=150mA,V_CE=10V
V_CE=-20V,I_C=-50mA
f=100MHz
V_CB=-10V,f=1MHz
V_CC=-30V, I_C=-150mA
I_B1=-I_B2=-15mA
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