BSS79B Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 – SEPTEMBER 95 7
PARTMARKING DETAILS - BSS79B - CE
BSS79C - CF
BSS79B
BSS79C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
P_TOT
t_j:t_stg
VALUE
75
40
6
800
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
Collector-Base Breakdown
Voltage
V_(BR)CBO 75
Collector-Emitter Breakdown
Voltage
V_(BR)CEO 40
Emitter-Base Breakdown Voltage V_(BR)EBO 6
Collector Base Cut-Off Current I_CBO
10
10
Emitter Base Cut-Off Current
I_EBO
10
Collector-Emitter Saturation
V_CE(sat)
0.3
Voltage
1.0
Static Forward
Current
Transfer Ratio
BSS79B h_FE
BSS79C
40
120
100 300
Transition Frequency
f_T
250
Collector-Base Capacitance
C_obo
8
Delay Time
t_d
10
Rise Time
t_r
10
Storage Time
t_s
225
Fall Time
t_f
60
UNIT
V
V
V
nA
µA
nA
V
V
MHz
pF
ns
ns
ns
ns
CONDITIONS.
I_C=10µA
I_C=10mA
IE=10µA
V_CB=60V
V_CB=60V,
T_amb=150^oC
V_BE=3.0V
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
I_C=150mA, V_CE=10V
I_C= 150mA, V_CE=10V
V_CE=20V, I_C=20mA
f=100MHz
V_CB=10V, f=1MHz
V_CC=30V, I_C=150mA
I_B1=I_B2=15mA
V_CC=30V, I_C=150mA
I_B1=I_B2=15mA
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