BSS69 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS

SOT23 PNP SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 1995 7
BSS69
BSS70
PARTMARKING DETAILS —
BSS69 - L2
BSS70 - L3
BSS69R - L6
BSS70R - L7
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Peak Pulse Current
I_CM
Continuous Collector Current
I_C
Base Current
I_B
Power Dissipation at T_amb=25°C
P_TOT
Operating and Storage Temperature Range t_j:t_stg
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-40
V
-40
V
-5
V
-200
mA
-100
mA
-50
mA
330
mW
-55 to +150
°C
UNIT
CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO
Collector-Base Breakdown Voltage
V(BR)CBO
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector- Emitter Cut-off Current
ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Static Forward Current BSS69
hFE
Transfer Ratio
Static Forward Current BSS70
hFE
Transfer Ratio
Transition Frequency
BSS69
BSS70
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
fT
Cobo
Cibo
N
-40
-40
-5
-0.65
30
40
50
30
15
60
80
100
60
30
200
250
Typ. 5
-50
-0.25
-0.40
-0.85
-0.95
150
300
4.5
10
V
V
V
nA
V
V
V
V
MHz
MHz
pF
pF
dB
Switching times: Delay; Rise
td; tf
Storage Time
ts
Fall Time
tf
35
ns
225 ns
70
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
IC=-1mA
IC=-10µA
IE=-10µA
VCES=-30V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA*
I_C=-10mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100µA,
IC=-1mA,
IC=-10mA, VCE=-1V
IC=-50mA*,
IC=-100mA*,
IC=-100µA,
IC=-1mA,
IC=-10mA, VCE=-1V
IC=-50mA*,
IC=-100mA*,
IC=-10mA, VCE=-20V
f=100MHz
VCB=-5V, f=100kHz
VEB=-0.5V, f=100kHz
IC=-100µΑ, VCE=-5V
RS=1kΩ, f=10Hz to15.7 kHz
VCC=-3V, IC=-10mA
IB1= IB2 =-1mA
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