 English |
|
|
|
|
|
|
|
| BSS65 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR | |||
| |||
|
SOT23 PNP SILICON PLANAR
HIGH SPEED TRANSISTOR
ISSUE 2 - SEPTEMBER 1995 7
PARTMARKING DETAIL Â BSS65 - L1
BSS65R - L5
BSS65
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IC
Power Dissipation at Tamb=25°C
PTOT
Operating and Storage Temperature Range tj:tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
BreakdownVoltages
Cut-Off Currents
Collector-Emitter
Saturation Voltage
V(BR)CEO -12
V(BR)CBO -12
V(BR)EBO -4
ICBO
IEBO
VCE(sat)
-100
-100
-0.15
-0.25
Base-Emitter
Saturation Voltage
VBE(sat)
-0.75
-0.82
-0.98
-1.20
Static Forward Current hFE
30
Transfer Ratio
40
150
Transition Frequency fT
400
Collector-Base
Capacitance
Emitter Base Capacitance
Switching Times
Turn-On Time
Turn-Off Time
Cobo
Cebo
ton
toff
6
6
23
60
34
90
VALUE
-12
-12
-4
-200
-100
-50
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mW
°C
UNIT
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
CONDITIONS.
IC=-10mA
IC=-10µA *
IE=-10µA
VCB=-6V, IE=0
VEB=-4V, IC=0
IC=-10mA, IB=-1mA
IC=-30mA, IB=-3mA
IC=-10mA, IB=-1mA
IC=-30mA, IB=-3mA
IC=-10mA, VCE=-0.3V
IC=-30mA, VCE=-0.5V
IC=-30mA, VCE=-10V,
f=100MHz
VCB=-5V, IE=0,
f=1MHz
VEB=-0.5V, IC=0, f=1MHz
nS
IC=-30mA
nS
IB1 = -IB2= -1.5mA
VCC=-10V
PAGE NUMBER
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese