BSS64 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistor

SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – SEPTEMBER 95 7
COMPLIMENTARY TYPE - BSS63
PARTMARKING DETAIL -
BSS64 - U3
BSS64R - U6
BSS64
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_TOT
t_j:t_stg
VALUE
120
80
5
100
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO 120
V
I_C=100µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO 80
V
I_C=4mA
Emitter-Base Breakdown V_(BR)EBO 5
Voltage
V
I_E=100µA
Collector Cut-Off Current I_CBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
I_EBO
V_CE(sat)
V_BE(sat)
100
50
nA
µA
VV^{CCBB==9900VV,T}_j=150^oC
200
nA
V_EB=5V
150
mV
I_C=4mA, I_B=400µA
200
mV
I_C=50mA, I_B=15mA
1.2
mV
I_C=4mA, I_B=400µA
Static Forward Current
h_FE
Transition Frequency
f_T
Typ.
60
20
80
55
I_C=1mA, V_CE=-1V
I_C=10mA, V_CE=1V
I_C=20mA, V_CE=1V
Typ.
60
100
MHz V_CE=10V, I_C=4mA
f=35 MHz
Output Capacitance
C_obo
Typ.
3
5
pF
V_CB=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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