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| BSS63 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor | |||
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 Â SEPTEMBER 95 7
COMPLIMENTARY TYPE Â BSS64
PARTMARKING DETAIL Â BSS63 - T3
BSS63R - T6
BSS63
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
PTOT
Operating and Storage Temperature Range tj:tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
-110
-100
-6
-100
330
-55 to +150
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
UNIT
V
V
V
mA
mW
°C
Collector-Base
V(BR)
-110
Breakdown Voltage
V IC=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-100
V IC=-100µA*
Emitter-Base Breakdown V(BR)EBO
-6
Voltage
V IE=-10µA
Collector Cut-Off Current IEBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
-100
-50
-200
-250
nA
µA
VVCCBB==--9900VV,,Tamb=150oC
nA VEB=-6V
mV IC=-25mA, IB=-2.5mA
Base-Emitter Saturation VBE(sat)
Voltage
-900
mV IC=-25mA, IB=-2.5mA
Static Forward Current
hFE
Transition Frequency
fT
30
IC=-10mA, VCE=-1V
30
IC=25mA, VCE=1V
Typ
50
85
MHz VCE=-5V, IC=25mA
f=35 MHz
Output Capacitance
Cobo
Typ.
3
pF VCB=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
PAGE NUMBER
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