BSS123 Datasheet, PDF (1/1 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
7
PARTMARKING DETAIL
– SA
BSS123
S
D
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V_DS
100
V
Drain-Gate Voltage
V_DGR
100
V
Continuous Drain Current at T_amb=25°C
I_D
170
mA
Pulsed Drain Current
I_DM
680
mA
Gate-Source Voltage
V_GS
± 20
V
Peak Gate-Source Voltage
V_GSM
± 20
V
Power Dissipation at T_amb=25°C
P_tot
360
mW
Operating and Storage Temperature Range
T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS
100
V
I_D=0.25mA, V_GS=0V
Gate-Source Threshold
Voltage
V_GS(th)
0.8 2.2 2.8 V
I_D=1mA, V_DS= V_GS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
I_GSS
I_DSS
R_DS(on)
10
50
nA V_GS=± 20V, V_DS=0V
1
15
µA V_DS=100V, V_GS=0V
2
60
µA V_DS=100V, V_GS=0V, T=125°C(2)
10
nA V_DS=20V, V_GS=0V
5
6
Ω
V_GS=10V, I_D=100mA
Forward
g_fs
Transconductance(1)(2)
80 120
mS V_DS=25V, I_D=100mA
Input Capacitance (2)
C_iss
Common Source
C_oss
Output Capacitance (2)
20 pF
9
pF
V_DS=25V, V_GS=0V, f=1MHz
Reverse Transfer
C_rss
Capacitance (2)
4
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t_d(on)
t_r
t_d(off)
t_f
10
ns
10
ns
15
ns
V_DD ≈30V, I_D=280mA
25
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
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