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| BSR40 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium power transistors | |||
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SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 â FEBRUARY 1996 7
BSR40
BSR42
COMPLEMENTARY TYPES â BSR40 â BSR30
C
BSR42 â BSR32
PARTMARKING DETAIL â
BSR40 â AR1
BSR42 â AR3
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
BSR40
BSR42
UNIT
Collector-Base Voltage
VCBO
70
90
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
BSR40 V(BR)CBO 70
Breakdown Voltage BSR42
90
Collector-Emitter BSR40 V(BR)CEO 60
Breakdown Voltage BSR42
80
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IC=100µA
V
IC=100µA
V
IC=10mA
V
IC=10mA
V
IE=10µA
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitence
Transition Frequency
ICBO
VCE(sat)
VBE(sat)
hFE
10
40
30
Cc
Ce
fT
100
100
50
0.25
0.5
1.0
1.2
120
12
90
nA
µA
V
V
V
V
pF
pF
MHz
VCB=60V
VCB=60V, Tamb=125°C
IC =150mA, IB=15mA
IC =500mA, IB=50mA
IC =150mA, IB=15mA
IC =500mA, IB=50mA
IC =100µA, VCE=5V
IC =100mA, VCE=5V
IC =500mA, VCE=5V
VCB =10V, f =1MHz
VEB =0.5V, f=1MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Ton
Turn-Off Time
Toff
250
ns
1000 ns
VCC =20V, IC =100mA
IB1 =-IB2 =-5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT493 datasheet.
3 - 67
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