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| BSR33 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 â MARCH 2001
COMPLEMENTARY TYPE â BSR43
BSR33
C
PARTMARKING DETAILS â BR4
ABSOLUTE MAXIMUM RATINGS.
E
C
B
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-90
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
PTOT
1
W
Operating and Storage Temperature Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -90
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -80
V
IC=-10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-10µA
Collector Cut-Off Current ICBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
Static Forward Current
hFE
30
Transfer Ratio
100
50
Output Capacitance
Cobo
Input Capacitance
Cibo
Transition Frequency
fT
100
-100 nA
-50
µA
-0.25 V
-0.5
V
-1.0
V
-1.2
V
300
20
pF
120
pF
MHz
VCB=-60V
VCB=-60V, Tamb=125°C
IC =-150mA, IB=-15mA*
IC =-500mA, IB=-50mA*
IC=-150mA, IB=-15mA*
IC =-500mA, IB=-50mA*
IC =-100µA, VCE =-5V*
IC =-100mA, VCE =-5V*
IC =-500mA, VCE =-5V*
VCB =-10V, f =1MHz
VEB =-0.5V, f =1MHz
IC=-50mA, VCE=-10V
f =35MHz
Turn-On Time
Ton
500
ns
Turn-Off Time
Toff
650
ns
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
VCC =-20V, IC =-100mA
IB1 =-IB2 =-5mA
TBA
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