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| BSR31 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 â FEBRUARY 1996
BSR31
BSR33
COMPLEMENTARY TYPE â BSR31 â BSR41
C
BSR33 â BSR43
PARTMARKING DETAILS â BSR31 â BR2
BSR33 â BR4
ABSOLUTE MAXIMUM RATINGS.
E
C
B
SOT89
PARAMETER
SYMBOL
BSR31
BSR33
UNIT
Collector-Base Voltage
VCBO
-70
-90
V
Collector-Emitter Voltage
VCEO
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
PTOT
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
BSR31 V(BR)CBO -70
Breakdown Voltage BSR33
-90
Collector-Emitter BSR31 V(BR)CEO -60
Breakdown Voltage BSR33
-80
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IC=-100µA
V
IC=-100µA
V
IC=-10mA
IC=-10mA
V
IE=-10mA
Collector Cut-Off Current ICBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
Static Forward Current
hFE
30
Transfer Ratio
100
50
Collector Capacitance
Cc
Emitter Capacitance
Ce
Transition Frequency
fT
100
-100
-50
-0.25
-0.5
-1.0
-1.2
300
20
120
nA
µA
V
V
V
V
pF
pF
MHz
VCB=-60V
VCB=-60V, Tamb=125°C
IC =-150mA, IB=-15mA*
IC =-500mA, IB=-50mA*
IC=-150mA, IB=-15mA*
IC =-500mA, IB=-50mA*
IC =-100µA, VCE =-5V*
IC =-100mA, VCE =-5V*
IC =-500mA, VCE =-5V*
VCB =-10V, f =1MHz
VEB =-0.5V, f =1MHz
IC=-50mA, VCE=-10V
f =35MHz
Turn-On Time
Ton
Turn-Off Time
Toff
500
ns
650
ns
VCC =-20V, IC =-100mA
IB1 =-IB2 =-5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 66
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